行业组件数据 · 2026

高压二极管

High-voltage diode for voltage multiplier circuits in industrial applications

技术定义与适配语境
典型 高压二极管 会按材料、尺寸公差、适配关系和失效风险在 电气设备制造 中评估。

A semiconductor device designed to allow current flow in one direction while blocking reverse current at high voltage levels, specifically engineered for voltage multiplier circuits that generate DC voltages higher than the input AC voltage through cascaded rectification stages.

组件规格

定义
A semiconductor device designed to allow current flow in one direction while blocking reverse current at high voltage levels, specifically engineered for voltage multiplier circuits that generate DC voltages higher than the input AC voltage through cascaded rectification stages.
工作原理
Operates on PN junction semiconductor physics, where forward bias allows electron-hole recombination for current conduction, while reverse bias creates a depletion region that blocks current flow. In voltage multiplier circuits, multiple diodes work with capacitors in ladder configurations (Cockcroft-Walton, Villard circuits) to progressively add voltage peaks from AC input, achieving voltage multiplication through charge pumping and storage mechanisms.
材料
Silicon (Si) or silicon carbide (SiC) semiconductor wafer with doped regionsaluminum or gold wire bondingceramic or epoxy encapsulationnickel-plated copper leadsglass passivation layer
Capacitance
1-10 pF
Forward Current
100 mA - 5 A
Breakdown Voltage
15-120 kV
Forward Voltage Drop
0.7-1.2 V
Junction Temperature
-55°C to +175°C
Reverse Recovery Time
50 ns - 1 μs
Peak Inverse Voltage (PIV)
10-100 kV
标准
IEC 60747MIL-PRF-19500JEDEC JESD22

行业分类与别名

高压二极管 的常用贸易名称、技术标识和检索关键词。

上级产品

该组件会出现在以下整机或工业产品中。

FMEA · 风险与缓解

诱因 → 失效模式 → 工程缓解

Voltage transients exceeding PIV rating->Catastrophic junction breakdown->Implement snubber circuits, use diodes with 20% voltage margin, install surge protection devices
Insufficient heat sinking->Thermal runaway and permanent damage->Calculate thermal resistance, use proper heatsinks, monitor junction temperature with sensors
Contamination on diode surface->Surface tracking and insulation failure->Apply conformal coating, maintain clean environment, use hermetically sealed packages

工业生态与工程逻辑

0
Dielectric breakdown under overvoltage
1
Thermal runaway from excessive current
2
Partial discharge in contaminated environments
3
Mechanical stress cracking from thermal cycling

合规与检测

tolerance
±5% on breakdown voltage, ±10% on forward voltage
test method
IEC 60747-1 for semiconductor devices, reverse bias leakage current measured at 80% of rated voltage, high-potential testing per IEC 61010

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采购评估维度

不是客户评论,也不是实时热度。以下维度用于前期 RFQ 准备和供应商评估。

技术文档
4/5
制造能力
4/5
可检验性
5/5
供应商透明度
3/5

这些分值是采购评估维度示例,不代表真实客户评分、具体国家买家反馈或实时询盘。

相关组件

常见问题

What is the main difference between standard diodes and high-voltage diodes?

High-voltage diodes have thicker depletion regions and specialized construction to withstand reverse voltages from 10kV to over 100kV, compared to standard diodes typically rated below 1kV. They feature graded junctions, field plates, and passivation layers to prevent voltage breakdown.

Why are voltage multiplier circuits important in industrial applications?

They enable generation of high DC voltages from lower AC inputs without bulky transformers, essential for X-ray equipment, electrostatic precipitators, laser power supplies, and particle accelerators where compact high-voltage sources are required.

How does temperature affect high-voltage diode performance?

Increased temperature reduces breakdown voltage (negative temperature coefficient) and increases leakage current. Silicon carbide diodes maintain better high-temperature performance than silicon diodes due to wider bandgap.

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